Aluminum nitride for heatspreading in RF IC's

Solid-State Electronics

Volumn 52, Issue 9, 2008, Pages 1359-1363

  La Spina, L ^a   Iborra, E ^b   Schellevis, H ^a   Clement, M ^b   Olivares, J ^b   Nanver, L K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Aluminum nitride; Bipolar transistor; Electrothermal phenomena; Heatspreader; Piezoelectric characteristics; RF integration; Thermal instabilities; Thermal resistance

Indexed keywords

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; BIPOLAR TRANSISTORS; ELECTRIC CURRENTS; GLASS; LIGHT METALS; MOLECULAR BEAM EPITAXY; NITRIDES; NONMETALS; SILICON; SPUTTER DEPOSITION; THERMOELECTRICITY; TRANSISTORS; TUNNEL DIODES; DEPOSITION; HEAT RESISTANCE; PIEZOELECTRICITY; REACTIVE SPUTTERING; THERMAL CONDUCTIVITY; THERMODYNAMIC STABILITY;

ALUMINUM NITRIDE; BIPOLAR DEVICES; BIPOLAR JUNCTION TRANSISTORS; BIPOLAR TRANSISTOR; DEPOSITION CONDITIONS; ELECTRICAL ISOLATION; ELECTROTHERMAL PHENOMENA; HEAT SPREADERS; HEATSPREADER; HIGH FREQUENCIES; HIGH-THERMAL CONDUCTIVITY; MULTISTEP DEPOSITION; PIEZOELECTRIC CHARACTERISTICS; PROCESS COMPATIBILITY; RF INTEGRATION; SILICON-ON-GLASS; THERMAL INSTABILITIES; THERMAL RESISTANCE;

REACTIVE SPUTTERING; ALUMINUM NITRIDE;

EID: 84932938924     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.04.009     Document Type: Article

References (27)

1. Lee C.C., Palisoc A.L., and Min Y.J. Thermal analysis of integrated circuit devices and packages. IEEE Trans Comp Hybr Manufact Tech 14 4 (1989) 701-709
2. Poulton K., Knudsen K.L., Corcoran J.J., Wang K.-C., Pierson R.L., Nubling R.B., et al. Thermal design and simulation of bipolar integrated circuits. IEEE J Solid-State Circ 27 10 (1992) 1379-1387
3. Fox R.M., Lee S.-G., and Zeidinger D.T. The effect of BJT self-heating on circuit behavior. IEEE J Solid-State Circ 28 6 (1993) 678-685
4. Harrison I., Dahlstro{combining double acute accent}m M., Krishnan S., Griffith Z., Kim Y.M., and Rodwell M.J.W. Thermal limitations of InP HBTs in 80 and 160 Gb ICs. IEEE Trans Electron Dev 51 4 (2004) 529-534
5. Lin S.-C., and Banerjee K. Cool chips: opportunities and implications for power and thermal management. IEEE Trans Electron Dev 55 1 (2008) 245-255
6. Dekker R., Baltus P.G.M., and Maas H.G.R. Substrate transfer for RF technologies. IEEE Trans Electron Dev 50 3 (2003) 747-757
7. Nanver L.K., et al. A back-wafer contacted silicon-on-glass integrated bipolar process - Part I: the conflict electrical versus thermal isolation. IEEE Trans Electron Dev 51 1 (2004) 42-50
8. Benetti M., Cannatà D., Di Pietrantonio F., and Verona E. Growth of AlN piezoelectric film on diamond for high-frequency surface acoustic wave devices. IEEE Trans Ultrason Ferroelect Freq Contr 52 10 (2005) 1806-1811
9. Martin F., Jan M.-E., Rey-Mermet S., Belgacem B., Su D., Cantoni M., et al. Shear mode coupling and tilted grain growth of AlN thin-films in BAW resonators. IEEE Trans Ultrason Ferroelect Freq Contr 54 (2007) 2367-2375
10. Iborra E., et al. Circuital model for the analysis of the piezoelectric response of AlN films using SAW filters. IEEE Trans Ultrason Ferroelect Freq Contr 54 (2007) 2367-2375
11. La Spina L., Schellevis H., Nenadović N., and Nanver L.K. PVD aluminum nitride as heat spreader in silicon-on-glass technology. Proc IEEE MIEL (2006) 365-368
12. Yang J., Kahn H., He A.-Q., Phillips S.M., and Heuer A.H. A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: The multipoly process. IEEE J Microelectromech Syst 9 4 (2000) 485-494
13. Sanz-Hervás A., et al. Degradation of the piezoelectric response of sputtered c-axis AlN thin-films with traces of non-(0 0 0 2) X-ray diffraction peaks. Appl Phys Lett 88 (2006) 161915 (1-3)
14. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), John Wiley and Sons
15. Spirito M., et al. Surface passivated high-resistivity silicon as a true microwave substrate. IEEE Trans Microw Theory Tech 53 7 (2005) 2340-2347
16. La Spina L., van Herwaarden A.W., Schellevis H., Wien W.H.A., Nenadović N., and Nanver L.K. Bulk-micromachined test structure for fast and reliable determination of the lateral thermal conductivity of thin-films. IEEE/ASME J Microelectromech Syst 6 3 (2007) 675-683
17. Comsol Multiphysics. User's Guide. Comsol AB; 2007.
18. La Spina L, Marano I, d'Alessandro V, Schellevis H, Nanver LK. Aluminum nitride thin-film heatspreaders integrated in bipolar transistors. In: Proc IEEE EuroSimE 2008, p. 99-103.
19. Nenadović N., et al. A back-wafer contacted silicon-on-glass integrated bipolar process - Part II: a novel analysis of thermal breakdown. IEEE Trans Electron Dev 51 1 (2004) 51-62
20. Nenadović N., et al. Restabilizing mechanisms after the onset of thermal instability in bipolar transistors. IEEE Trans Electron Dev 53 4 (2006) 643-653
21. Rinaldi N., and d'Alessandro V. Theory of electrothermal behavior of bipolar transistors: Part II - two-finger devices. IEEE Trans Electron Dev 52 9 (2005) 2022-2033
22. Liu W. Thermal coupling in 2-finger heterojunction bipolar transistors. IEEE Trans Electron Dev 42 6 (1995) 1033-1038
23. Liao C.-H., Lee C.-P., Wang N.L., and Lin B. Optimum design for a thermally stable multifinger power transistor. IEEE Trans Electron Dev 49 5 (2002) 902-908
24. Walkey D.J., Celo D., Smy T.J., and Surridge R.K. A thermal design methodology for multifinger bipolar transistor structures. IEEE Trans Electron Dev 49 8 (2002) 1375-1383
25. van Noort W.D., and Dekker R. Thermal resistance of (H)BTs on bulk Si, SOI, and glass. Proc IEEE BCTM (2003) 129-132
26. Deixler P., et al. QUBiC4Plus: a cost effective BiCMOS manufacturing technology with elite passive enhancement optimized for 'silicon-based' RF-system-in-package environment. Proc IEEE BCTM (2005) 272-275
27. Malm B.G., et al. Self-heating effects in a BiCMOS on SOI technology for RFIC applications. IEEE Trans Electron Dev 52 7 (2005) 1423-1428