Restabilizing mechanisms after the onset of thermal instability in bipolar transistors

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 643-653

  Nenadović, Nebojša ^a,b   d'Alessandro, Vincenzo ^c   La Spina, Luigi ^a   Rinaldi, Niccolò ^c   Nanver, Lis K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

^c UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Ballasting resistors; Bipolar transistors; Electrothermal feedback; Electrothermal modeling; Electrothermal restabilization; High injection effects; Silicon on glass technology; Substrate transfer; Thermal instability

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM COMPOUNDS; SUBSTRATES; THERMODYNAMIC STABILITY;

BALLASTING RESISTORS; ELECTROTHERMAL FEEDBACK; SILICON-ON-GLASS TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33645742863     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870277     Document Type: Article

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