Thermal resistance of (H)BTs on bulk Si, SOI and glass

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2003, Pages 129-132

  Van Noort, Wibo D ^a   Dekker, R ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Bipolar transistor; Heterojunction bipolar transistor; SiGe; Silicon; SOA; Substrate transfer technology; Thermal resistance

Indexed keywords

HEAT RESISTANCE; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

SUBSTRATE TRANSFER TECHNOLOGY; THERMAL RESISTANCE EXTRACTION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1042300823     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/bipol.2003.1274951     Document Type: Conference Paper

References (8)

1. J.S. Reih, et al., "SiGe HBTs with cutoff Frequency of 350 GHz" IEDM Tech. Dig., pp. 771-4, 2002.
2. P. Deixler et al., "QUBiC4G: A fT/fmax=70/100GHz 0.25 μm Low Power SiGe-BiCMOS Production Technology with High Quality Passives for 12.5Gb/s Optical Networking and Emerging Wireless Applications up to 20GHz" in: Proc. of the 2002 Bipolar/BiCMOS circuits and technology meeting, pp. 201-4, 2002.
3. R. Dekker et al., "An ultra low-power RF bipolar technology on glass" In: International Electron Devices Meeting. IEDM Technical Digest, pp. 921-3, 1997.
4. Dekker, R. et al., "77% power added efficiency surface-mounted bipolar power transistors for low-voltage wireless applications" In: Proc. of the 2000 Bipolar/BiCMOS circuits and technology meeting, pp. 191-4, 2000.
5. Narayan et al., "Thin film transfer process for low cost MCM-D fabrication", IEEE Transactions on Components, Packaging and Manufacturing Technology, Part B: Advanced Packaging, vo. 18, no. 1, pp. 42-6, Feb. 1995.
6. Richard C. Joy et al., "Thermal Properties of Very Fast Transistors", IEEE Trans. on El. Dev., Vol ED-17, No. 8, pp. 586-94, August 1970.
7. Rieh, J.S., D. Greenberg, et al., "Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors" in: 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers, pp. 110-13, Sept. 2001.
8. N. Nenadović et al., "Analytical formulation and electrical measurements of self-heating in silicon BJT's" in: Proc. of the 2002 Bipolar/BiCMOS circuits and technology meeting, pp. 24-7, 2002.