Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 9363, Issue , 2015, Pages

  Lazić, Snežana ^a   Chernysheva, Ekaterina ^a   Gačević, Žarko ^b   García Lepetit, Noemi ^a   Van Der Meulen, Herko P ^a   Müller, Marcus ^c   Bertram, Frank ^c   Veit, Peter ^c   Christen, Jürgen ^c   Torres Pardo, Almudena ^d   González Calbet, José M ^d   Calleja, Enrique ^b   Calleja, José M ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

^d UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

GaN InGaN nanowire quantum dots; polarized emission; single photon source

Indexed keywords

CATHODOLUMINESCENCE; DECAY (ORGANIC); EXCITONS; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; INFORMATION MANAGEMENT; MOLECULAR BEAM EPITAXY; NANOWIRES; NITRIDES; PHOTOLUMINESCENCE; PHOTONS; POLARIZATION; QUANTUM OPTICS; QUANTUM THEORY; SAPPHIRE; SEMICONDUCTOR QUANTUM DOTS;

GAN/INGAN; LINEAR POLARIZATION RATIO; PHOTOLUMINESCENCE LINES; POLARIZED EMISSIONS; SINGLE PHOTON EMISSION; SINGLE PHOTON EMITTERS; SINGLE-PHOTON SOURCE; TIME-RESOLVED PHOTOLUMINESCENCE;

PARTICLE BEAMS;

EID: 84931857754     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.2074898     Document Type: Conference Paper

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