Single photon emission from InGaN/GaN quantum dots up to 50 K

Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

  Kremling, Stefan ^a   Tessarek, Christian ^b   Dartsch, Heiko ^b   Figge, Stephan ^b   Höfling, Sven ^a   Worschech, Lukas ^a   Kruse, Carsten ^b   Hommel, Detlef ^b   Forchel, Alfred ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOCORRELATION MEASUREMENT; DEGREE OF LINEAR POLARIZATION; GROWTH AXIS; INGAN QUANTUM DOTS; INGAN/GAN; METAL-ORGANIC VAPOR PHASE EPITAXY; MICROPHOTOLUMINESCENCE; SAPPHIRE SUBSTRATES; SECOND ORDERS; SINGLE EXCITONS; SINGLE PHOTON EMISSION; SPECTRAL RANGE; UNDER PULSED EXCITATIONS;

OPTICAL PROPERTIES; SAPPHIRE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84857224866     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3683521     Document Type: Article

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