Tailoring the growth rate and surface facet for synthesis of high-quality continuous graphene films from CH4 at 750 °c via chemical vapor deposition

Journal of Physical Chemistry C

Volumn 119, Issue 21, 2015, Pages 11516-11523

  Jacobberger, Robert M ^a   Levesque, Pierre L ^b   Xu, Feng ^a   Wu, Meng Yin ^a   Choubak, Saman ^c   Desjardins, Patrick ^c   Martel, Richard ^b   Arnold, Michael S ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CATALYSTS; CHEMICAL VAPOR DEPOSITION; COPPER COMPOUNDS; ELECTRONS; GRAPHENE;

CRYSTALLOGRAPHIC ORIENTATIONS; FIELD-EFFECT MOBILITIES; GROWTH CONDITIONS; LOW DEFECT DENSITIES; LOW ENERGY ELECTRON MICROSCOPY; NUCLEATION DENSITIES; PRECURSOR COMPOSITION; SYNTHESIS CONDITIONS;

GROWTH RATE;

EID: 84930666411     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp5116355     Document Type: Article

References (55)

1. Hao, Y. F.; Bharathi, M. S.; Wang, L.; Liu, Y. Y.; Chen, H.; Nie, S.; Wang, X. H.; Chou, H.; Tan, C.; Fallahazad, B. The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper Science 2013, 342, 720-723
2. Lopez, G. A.; Mittemeijer, E. The Solubility of C in Solid Cu Scr. Mater. 2004, 51, 1-5
3. Li, X. S.; Cai, W. W.; Colombo, L.; Ruoff, R. S. Evolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling Nano Lett. 2009, 9, 4268-4272
4. Yao, Y. G.; Li, Z.; Lin, Z. Y.; Moon, K. S.; Agar, J.; Wong, C. P. Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates J. Phys. Chem. C 2011, 115, 5232-5238
5. Gao, L.; Guest, J. R.; Guisinger, N. P. Epitaxial Graphene on Cu(111) Nano Lett. 2010, 10, 3512-3516
6. Weatherup, R. S.; Bayer, B. C.; Blume, R.; Ducati, C.; Baehtz, C.; Schlogl, R.; Hofmann, S. In Situ Characterization of Alloy Catalysts for Low-Temperature Graphene Growth Nano Lett. 2011, 11, 4154-4160
7. Dong, X. C.; Wang, P.; Fang, W. J.; Su, C. Y.; Chen, Y. H.; Li, L. J.; Huang, W.; Chen, P. Growth of Large-Sized Graphene Thin-Films by Liquid Precursor-Based Chemical Vapor Deposition under Atmospheric Pressure Carbon 2011, 49, 3672-3678
8. Srivastava, A.; Galande, C.; Ci, L.; Song, L.; Rai, C.; Jariwala, D.; Kelly, K. F.; Ajayan, P. M. Novel Liquid Precursor-Based Facile Synthesis of Large-Area Continuous, Single, and Few-Layer Graphene Films Chem. Mater. 2010, 22, 3457-3461
9. Guermoune, A.; Chari, T.; Popescu, F.; Sabri, S. S.; Guillemette, J.; Skulason, H. S.; Szkopek, T.; Siaj, M. Chemical Vapor Deposition Synthesis of Graphene on Copper with Methanol, Ethanol, and Propanol Precursors Carbon 2011, 49, 4204-4210
10. Zhao, P.; Kumamoto, A.; Kim, S.; Chen, X.; Hou, B.; Chiashi, S.; Einarsson, E.; Ikuhara, Y.; Maruyama, S. Self-Limiting Chemical Vapor Deposition Growth of Monolayer Graphene from Ethanol J. Phys. Chem. C 2013, 117, 10755-10763
11. Li, Z. C.; Wu, P.; Wang, C. X.; Fan, X. D.; Zhang, W. H.; Zhai, X. F.; Zeng, C. G.; Li, Z. Y.; Yang, J. L.; Hou, J. G. Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources ACS Nano 2011, 5, 3385-3390
12. Zhang, B.; Lee, W. H.; Piner, R.; Kholmanov, I.; Wu, Y. P.; Li, H. F.; Ji, H. X.; Ruoff, R. S. Low-Temperature Chemical Vapor Deposition Growth of Graphene from Toluene on Electropolished Copper Foils ACS Nano 2012, 6, 2471-2476
13. Gan, X. C.; Zhou, H. B.; Zhu, B. J.; Yu, X. Y.; Jia, Y.; Sun, B.; Zhang, M. Y.; Huang, X. J.; Liu, J. H.; Luo, T. A Simple Method to Synthesize Graphene at 633 K by Dechlorination of Hexachlorobenzene on Cu Foils Carbon 2012, 50, 306-310
14. Jiang, L.; Niu, T. C.; Lu, X. Q.; Dong, H. L.; Chen, W.; Liu, Y. Q.; Hu, W. P.; Zhu, D. B. Low-Temperature, Bottom-Up Synthesis of Graphene via a Radical-Coupling Reaction J. Am. Chem. Soc. 2013, 135, 9050-9054
15. Xue, Y. Z.; Wu, B.; Jiang, L.; Guo, Y. L.; Huang, L. P.; Chen, J. Y.; Tan, J. H.; Geng, D. C.; Luo, B. R.; Hu, W. P. Low Temperature Growth of Highly Nitrogen-Doped Single Crystal Graphene Arrays by Chemical Vapor Deposition J. Am. Chem. Soc. 2012, 134, 11060-11063
16. Roth, S.; Matsui, F.; Greber, T.; Osterwalder, J. Chemical Vapor Deposition and Characterization of Aligned and Incommensurate Graphene/Hexagonal Boron Nitride Heterostack on Cu(111) Nano Lett. 2013, 13, 2668-2675
17. Kidambi, P. R.; Ducati, C.; Dlubak, B.; Gardiner, D.; Weatherup, R. S.; Martin, M. B.; Seneor, P.; Coles, H.; Hofmann, S. The Parameter Space of Graphene Chemical Vapor Deposition on Polycrystalline Cu J. Phys. Chem. C 2012, 116, 22492-22501
18. Sun, Z. Z.; Yan, Z.; Yao, J.; Beitler, E.; Zhu, Y.; Tour, J. M. Growth of Graphene from Solid Carbon Sources Nature 2010, 468, 549-552
19. Wu, T. R.; Ding, G. Q.; Shen, H. L.; Wang, H. M.; Sun, L.; Jiang, D.; Xie, X. M.; Jiang, M. H. Triggering the Continuous Growth of Graphene Toward Millimeter-Sized Grains Adv. Funct. Mater. 2013, 23, 198-203
20. Blanksby, S. J.; Ellison, G. B. Bond Dissociation Energies of Organic Molecules Acc. Chem. Res. 2003, 36, 255-263
21. Kim, H.; Mattevi, C.; Calvo, M. R.; Oberg, J. C.; Artiglia, L.; Agnoli, S.; Hirjibehedin, C. F.; Chhowalla, M.; Saiz, E. Activation Energy Paths for Graphene Nucleation and Growth on Cu ACS Nano 2012, 6, 3614-3623
22. Xing, S. R.; Wu, W.; Wang, Y. A.; Bao, J. M.; Pei, S. S. Kinetic Study of Graphene Growth: Temperature Perspective on Growth Rate and Film Thickness by Chemical Vapor Deposition Chem. Phys. Lett. 2013, 580, 62-66
23. Safron, N. S.; Arnold, M. S. Experimentally Determined Model of Atmospheric Pressure CVD of Graphene on Cu J. Mater. Chem. C 2014, 2, 744-755
24. Wood, J. D.; Schmucker, S. W.; Lyons, A. S.; Pop, E.; Lyding, J. W. Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition Nano Lett. 2011, 11, 4547-4554
25. Ishihara, M.; Koga, Y.; Kim, J.; Tsugawa, K.; Hasegawa, M. Direct Evidence of Advantage of Cu(111) for Graphene Synthesis by using Raman Mapping and Electron Backscatter Diffraction Mater. Lett. 2011, 65, 2864-2867
26. Tao, L.; Lee, J.; Chou, H.; Holt, M.; Ruoff, R. S.; Akinwande, D. Synthesis of High Quality Monolayer Graphene at Reduced Temperature on Hydrogen-Enriched Evaporated Copper (111) Films ACS Nano 2012, 6, 2319-2325
27. Jacobberger, R. M.; Arnold, M. S. Graphene Growth Dynamics on Epitaxial Copper Thin Films Chem. Mater. 2013, 25, 871-877
28. Li, X. S.; Magnuson, C. W.; Venugopal, A.; Tromp, R. M.; Hannon, J. B.; Vogel, E. M.; Colombo, L.; Ruoff, R. S. Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper J. Am. Chem. Soc. 2011, 133, 2816-2819
29. Fang, W.; Hsu, A. L.; Song, Y.; Birdwell, A. G.; Amani, M.; Dubey, M.; Dresselhaus, M. S.; Palacios, T.; Kong, J. Asymmetric Growth of Bilayer Graphene on Copper Enclosures using Low-Pressure Chemical Vapor Deposition ACS Nano 2014, 8, 6491-6499
30. Meca, E.; Lowengrub, J.; Kim, H.; Mattevi, C.; Shenoy, V. B. Epitaxial Graphene Growth and Shape Dynamics on Copper: Phase-Field Modeling and Experiments Nano Lett. 2013, 13, 5692-5697
31. Loginova, E.; Bartelt, N. C.; Feibelman, P. J.; McCarty, K. F. Factors Influencing Graphene Growth on Metal Surfaces New J. Phys. 2009, 11, 063046
32. Li, X. S.; Magnuson, C. W.; Venugopal, A.; An, J. H.; Suk, J. W.; Han, B. Y.; Borysiak, M.; Cai, W. W.; Velamakanni, A.; Zhu, Y. W. Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process Nano Lett. 2010, 10, 4328-4334
33. Ferrari, A. C. Raman Spectroscopy of Graphene and Graphite: Disorder, Electron-Phonon Coupling, Doping and Nonadiabatic Effects Solid State Commun. 2007, 143, 47-57
34. Vlassiouk, I.; Smirnov, S.; Regmi, M.; Surwade, S. P.; Srivastava, N.; Feenstra, R.; Eres, G.; Parish, C.; Lavrik, N.; Datskos, P. Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure J. Phys. Chem. C 2013, 117, 18919-18926
35. Han, G. H.; Gunes, F.; Bae, J. J.; Kim, E. S.; Chae, S. J.; Shin, H. J.; Choi, J. Y.; Pribat, D.; Lee, Y. H. Influence of Copper Morphology in Forming Nucleation Seeds for Graphene Growth Nano Lett. 2011, 11, 4144-4148
36. Vlassiouk, I.; Regmi, M.; Fulvio, P. F.; Dai, S.; Datskos, P.; Eres, G.; Smirnov, S. Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene ACS Nano 2011, 5, 6069-6076
37. Srivastava, N.; Gao, Q.; Widom, M.; Feenstra, R. M.; Nie, S.; McCarty, K. F.; Vlassiouk, I. V. Low-Energy Electron Reflectivity of Graphene on Copper and Other Substrates Phys. Rev. B 2013, 87, 245414
38. Zhao, L.; Rim, K. T.; Zhou, H.; He, R.; Heinz, T. F.; Pinczuk, A.; Flynn, G. W.; Pasupathy, A. N. Influence of Copper Crystal Surface on the CVD Growth of Large Area Monolayer Graphene Solid State Commun. 2011, 151, 509-513
39. Ogawa, Y.; Hu, B. S.; Orofeo, C. M.; Tsuji, M.; Ikeda, K.; Mizuno, S.; Hibino, H.; Ago, H. Domain Structure and Boundary in Single-Layer Graphene Grown on Cu(111) and Cu(100) Films J. Phys. Chem. Lett. 2012, 3, 219-226
40. Ago, H.; Ogawa, Y.; Tsuji, M.; Mizuno, S.; Hibino, H. Catalytic Growth of Graphene: Toward Large-Area Single-Crystalline Graphene J. Phys. Chem. Lett. 2012, 3, 2228-2236
41. Nie, S.; Wofford, J. M.; Bartelt, N. C.; Dubon, O. D.; McCarty, K. F. Origin of the Mosaicity in Graphene Grown on Cu(111) Phys. Rev. B 2011, 84, 155425
42. Hu, B. S.; Ago, H.; Ito, Y.; Kawahara, K.; Tsuji, M.; Magome, E.; Sumitani, K.; Mizuta, N.; Ikeda, K.; Mizuno, S. Epitaxial Growth of Large-Area Single-Layer Graphene over Cu(111)/Sapphire by Atmospheric Pressure CVD Carbon 2012, 50, 57-65
43. Rasool, H. I.; Song, E. B.; Mecklenburg, M.; Regan, B. C.; Wang, K. L.; Weiller, B. H.; Gimzewski, J. K. Atomic-Scale Characterization of Graphene Grown on Copper (100) Single Crystals J. Am. Chem. Soc. 2011, 133, 12536-12543
44. Wofford, J. M.; Nie, S.; McCarty, K. F.; Bartelt, N. C.; Dubon, O. D. Graphene Islands on Cu Foils: The Interplay between Shape, Orientation, and Defects Nano Lett. 2010, 10, 4890-4896
45. Berciaud, S.; Li, X. L.; Htoon, H.; Brus, L. E.; Doorn, S. K.; Heinz, T. F. Intrinsic Line Shape of the Raman 2D-Mode in Freestanding Graphene Monolayers Nano Lett. 2013, 13, 3517-3523
46. Lee, J. E.; Ahn, G.; Shim, J.; Lee, Y. S.; Ryu, S. Optical Separation of Mechanical Strain from Charge Doping in Graphene Nat. Commun. 2012, 3, 1024
47. Sundaram, R. S.; Steiner, M.; Chiu, H.; Engel, M.; Bol, A. A.; Krupke, R.; Burghard, M.; Kern, K.; Avouris, P. The Graphene-Gold Interface and Its Implications for Nanoelectronics Nano Lett. 2011, 11, 3833-3837
48. Sabri, S. S.; Levesque, P. L.; Aguirre, C. M.; Guillemette, J.; Martel, R.; Szkopek, T. Graphene Field Effect Transistors with Parylene Gate Dielectric Appl. Phys. Lett. 2009, 95, 242104
49. Kim, M.; Safron, N. S.; Han, E.; Arnold, M. S.; Gopalan, P. Electronic Transport and Raman Scattering in Size-Controlled Nanoperforated Graphene ACS Nano 2012, 6, 9846-9854
50. Zhang, W.; Wu, P.; Li, Z.; Yang, J. First-Principles Thermodynamics of Graphene Growth on Cu Surfaces J. Phys. Chem. C 2011, 115, 17782-17787
51. Feron, O.; Langlais, F.; Naslain, R. In-Situ Analysis of Gas Phase Decomposition and Kinetic Study during Carbon Deposition from Mixtures of Carbon Tetrachloride and Methane Carbon 1999, 37, 1355-1361
52. Kondo, M.; Fukawa, M.; Guo, L. H.; Matsuda, A. High Rate Growth of Microcrystalline Silicon at Low Temperatures J. Non-Cryst. Solids 2000, 266-269, 84-89
53. Ganguly, G.; Matsuda, A. Defect Formation during Growth of Hydrogenated Amorphous-Silicon Phys. Rev. B 1993, 47, 3661-3670
54. Choubak, S.; Biron, M.; Levesque, P. L.; Martel, R.; Desjardins, P. No Graphene Etching in Purified Hydrogen J. Phys. Chem. Lett. 2013, 4, 1100-1103
55. Choubak, S.; Levesque, P. L.; Gaufres, E.; Biron, M.; Desjardins, P.; Martel, R. Graphene CVD: Interplay between Growth and Etching on Morphology and Stacking by Hydrogen and Oxidizing Impurities J. Phys. Chem. C 2014, 118, 21532-21540