Direct evidence of advantage of Cu(111) for graphene synthesis by using Raman mapping and electron backscatter diffraction

Materials Letters

Volumn 65, Issue 19-20, 2011, Pages 2864-2867

  Ishihara, Masatou ^a   Koga, Yoshinori ^a   Kim, Jaeho ^a   Tsugawa, Kazuo ^a   Hasegawa, Masataka ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

EBSD; Few layer graphene; Raman; Single layer graphene; Thermal chemical vapor deposition

Indexed keywords

EBSD; FEW-LAYER GRAPHENE; RAMAN; SINGLE LAYER; THERMAL CHEMICAL VAPOR DEPOSITION;

BACKSCATTERING; CHEMICAL VAPOR DEPOSITION; COPPER; ELECTRON DIFFRACTION; MAPPING; SINGLE CRYSTAL SURFACES; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

GRAPHENE;

EID: 79959972425     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2011.06.047     Document Type: Article

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