Effects of extrinsic point defects in phosphorene: B, C, N, O, and F adatoms

Applied Physics Letters

Volumn 106, Issue 17, 2015, Pages

  Wang, Gaoxue ^a   Pandey, Ravindra ^a   Karna, Shashi P ^b  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; CARRIER MOBILITY; CHEMICAL BONDS; ELECTRONEGATIVITY; ELECTRONIC PROPERTIES; ENERGY GAP; MAGNETIC MOMENTS; POINT DEFECTS; SURFACE DEFECTS;

ELECTRONIC AND MAGNETIC PROPERTIES; ELECTRONIC CONFIGURATION; ENVIRONMENTAL SENSITIVITIES; FUNCTIONALIZATIONS; HIGH CARRIER MOBILITY; INTERSTITIAL SITES; LOCAL MAGNETIC MOMENTS; SEMICONDUCTING MATERIALS;

DENSITY FUNCTIONAL THEORY;

EID: 84929486023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4919389     Document Type: Article

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