Electron tunneling characteristics of a cubic quantum dot, (PbS) 32

Journal of Chemical Physics

Volumn 139, Issue 24, 2013, Pages

  Gupta, Sanjeev K ^a   He, Haiying ^b   Banyai, Douglas ^a   Kandalam, Anil K ^c   Pandey, Ravindra ^a  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b VALPARAISO UNIVERSITY   (United States)

^c WEST CHESTER UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC DISTRIBUTION; AU(110); BRIGHT IMAGES; CONDUCTION CHANNEL; IV CHARACTERISTICS; NEGATIVE DIFFERENTIAL RESISTANCE EFFECT; TUNNELING CHARACTERISTICS; TUNNELING CURRENT;

ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SUPERCONDUCTING MATERIALS;

ELECTRON TUNNELING;

EID: 84903362453     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4849136     Document Type: Article

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