-
1
-
-
18844385524
-
-
K.-Q. Peng, Y. Wu, H. Fang, X. Zhong, Y. Xu, J. Zhu, Angew. Chem. Int. Ed. 2005, 44, 2737.
-
(2005)
Angew. Chem. Int. Ed.
, vol.44
, pp. 2737
-
-
Peng, K.-Q.1
Wu, Y.2
Fang, H.3
Zhong, X.4
Xu, Y.5
Zhu, J.6
-
2
-
-
35348984409
-
-
B. Tian, X. Zheng, T. J. Kempa, Y. Fang, N. Yu, G. Yu, J. Huang, C. M. Lieber, Nature 2007, 449, 885.
-
(2007)
Nature
, vol.449
, pp. 885
-
-
Tian, B.1
Zheng, X.2
Kempa, T.J.3
Fang, Y.4
Yu, N.5
Yu, G.6
Huang, J.7
Lieber, C.M.8
-
3
-
-
83755219997
-
-
H. Park, D. Shin, G. Kang, S. Baek, K. Kim, W. J. Padilla, Adv. Mater. 2011, 23, 5796.
-
(2011)
Adv. Mater.
, vol.23
, pp. 5796
-
-
Park, H.1
Shin, D.2
Kang, G.3
Baek, S.4
Kim, K.5
Padilla, W.J.6
-
4
-
-
84942237880
-
-
R. Johnson, G. Lucovsky, I. Baumyol, J. Vac. Sci. Technol. A 2001, 19, 1355.
-
(2001)
J. Vac. Sci. Technol. A
, vol.19
, pp. 1355
-
-
Johnson, R.1
Lucovsky, G.2
Baumyol, I.3
-
5
-
-
84863686164
-
-
V. Naumann, M. Otto, C. Hagendorf, R. B. Wehrspohn, J. Vac. Sci. Technol. A 2012, 30, 04D106
-
(2012)
J. Vac. Sci. Technol. A
, vol.30
, pp. 04D106
-
-
Naumann, V.1
Otto, M.2
Hagendorf, C.3
Wehrspohn, R.B.4
-
6
-
-
84861925497
-
-
M. Otto, M. Kroll, T. Kasebier, R. Salzer, A. Tunnermann, R. B. Wehrspohn, Appl. Phys. Lett. 2012, 100, 191603
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 191603
-
-
Otto, M.1
Kroll, M.2
Kasebier, T.3
Salzer, R.4
Tunnermann, A.5
Wehrspohn, R.B.6
-
7
-
-
78650811764
-
-
Z. Huang, N. Geyer, P. Werner, J. d. Boor, U. Gösele, Adv. Mater. 2011, 23, 285.
-
(2011)
Adv. Mater.
, vol.23
, pp. 285
-
-
Huang, Z.1
Geyer, N.2
Werner, P.3
Gösele, U.4
-
8
-
-
4544316378
-
-
(Eds: B. Zobrist, S. Dumas), Wiley, New York, USA
-
S. M. Sze, G. S. May, Fundamentals of Semiconductor Fabrication (Eds:, B. Zobrist, S. Dumas,), Wiley, New York, USA 2004, P. 49.
-
(2004)
Fundamentals of Semiconductor Fabrication
, pp. 49
-
-
Sze, S.M.1
May, G.S.2
-
9
-
-
0003711399
-
-
(Eds: I. P. Kaminow, W. Engl, T. Sugano, I. H. K. V. Lotsch), Springer, Heidelberg, Germany, P. 161
-
T. Hori, Gate Dielectrics and MOS ULSIs, Principles, Technologies, and Applications (Eds:, I. P. Kaminow, W. Engl, T. Sugano, I. H. K. V. Lotsch,), Springer, Heidelberg, Germany 1997, P. 158, 161.
-
(1997)
Gate Dielectrics and MOS ULSIs, Principles, Technologies, and Applications
, pp. 158
-
-
Hori, T.1
-
10
-
-
78751475858
-
-
N. H. Thoan, K. Keunen, V. V. Afanas'ev, A. Stesmans, J. Appl. Phys. 2011, 109, 013710.
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 013710
-
-
Thoan, N.H.1
Keunen, K.2
Afanas'Ev, V.V.3
Stesmans, A.4
-
12
-
-
78650866081
-
-
R. E. -Herbert, Y. Hwang, S. Stemmer, J. Appl. Phys. 2010, 108, 124101.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 124101
-
-
Herbert, R.E.1
Hwang, Y.2
Stemmer, S.3
-
13
-
-
81355132346
-
-
G. Digemans, N. M. Terlinden, M. A. Verheijen, M. C. M van de Sanden, W. M. M. Kessels, J. Appl. Phys. 2011, 110, 093715
-
(2011)
J. Appl. Phys.
, vol.110
, pp. 093715
-
-
Digemans, G.1
Terlinden, N.M.2
Verheijen, M.A.3
Van De Sanden, M.C.M.4
Kessels, W.M.M.5
-
14
-
-
78650969840
-
-
G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels, Phys. Status Solidi RRL 2011, 5, 21-24
-
(2011)
Phys. Status Solidi RRL
, vol.5
, pp. 21-24
-
-
Dingemans, G.1
Van De Sanden, M.C.M.2
Kessels, W.M.M.3
-
15
-
-
84864184103
-
-
C. W. Teplin, B. G. Lee, T. R. Fanning, J. Wang, S. Grover, G. Hasoon, R. Bauer, J. Bornstein, P. Schroeter, H. M. Branz, Energy Environ. Sci. 2012, 5, 8193.
-
(2012)
Energy Environ. Sci.
, vol.5
, pp. 8193
-
-
Teplin, C.W.1
Lee, B.G.2
Fanning, T.R.3
Wang, J.4
Grover, S.5
Hasoon, G.6
Bauer, R.7
Bornstein, J.8
Schroeter, P.9
Branz, H.M.10
-
16
-
-
67650070783
-
-
V. Schmidt, J. V. Wittemann, S. Senz, U. Gösele, Adv. Mater. 2009, 21, 2681.
-
(2009)
Adv. Mater.
, vol.21
, pp. 2681
-
-
Schmidt, V.1
Wittemann, J.V.2
Senz, S.3
Gösele, U.4
-
21
-
-
70350227357
-
-
P. S. -Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, R. Preu, Appl. Phys. Lett. 2009, 95, 151502.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 151502
-
-
Cast, P.S.1
Kania, D.2
Hofmann, M.3
Benick, J.4
Rentsch, J.5
Preu, R.6
-
22
-
-
84869094983
-
-
J. H. Oh, H. C. Yuan, H. M. Branz, Nat. Nanotechnol. 2012, 7, 743.
-
(2012)
Nat. Nanotechnol.
, vol.7
, pp. 743
-
-
Oh, J.H.1
Yuan, H.C.2
Branz, H.M.3
-
23
-
-
33746593811
-
-
B. Hoex, S. B. Heil, E. Langereis, M. C. M van de Sanden, W. M. M. Kessels, Appl. Phys. Lett. 2006, 89, 042112.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 042112
-
-
Hoex, B.1
Heil, S.B.2
Langereis, E.3
Van De Sanden, M.C.M.4
Kessels, W.M.M.5
-
24
-
-
84882264487
-
-
M. Algasinger, J. Paye, F. Werner, J. Schmidt, M. S. Brandt, M. Stuzmann, S. Koynov, Adv. Energy. Mater. 2013, 3, 8, 1068
-
(2013)
Adv. Energy. Mater.
, vol.3
, Issue.8
, pp. 1068
-
-
Algasinger, M.1
Paye, J.2
Werner, F.3
Schmidt, J.4
Brandt, M.S.5
Stuzmann, M.6
Koynov, S.7
-
25
-
-
84942242568
-
-
J. B. Kim, D. R. Kwon, K. Charkrabarti, C. Lee, J. Appl. Phys. 2002, 92, 11.
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 11
-
-
Kim, J.B.1
Kwon, D.R.2
Charkrabarti, K.3
Lee, C.4
-
26
-
-
85061459148
-
-
S. K. Kim, S. W. Lee, C. S. Hwang, Y. S. Min, J. Y. Won, J. Jeong, J. Electrochem. Soc. 2006, 153, 5
-
(2006)
J. Electrochem. Soc.
, vol.153
, pp. 5
-
-
Kim, S.K.1
Lee, S.W.2
Hwang, C.S.3
Min, Y.S.4
Won, J.Y.5
Jeong, J.6
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