Trapping-related recombination of charge carriers in silicon

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 443-446

  Gogolin, R ^a   Harder, N P ^a,b   Brendel, R ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE TRAP STATE; CAPTURE CROSS SECTIONS; LOW LEVEL; MAJORITY CARRIERS; MINORITY CARRIER; ORDERS OF MAGNITUDE; RECOMBINATION LIFETIME; TRAP STATE; TRAPPING EFFECTS; TRAPPING MODEL;

PHOTOVOLTAIC EFFECTS;

CARRIER LIFETIME;

EID: 78650147130     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616743     Document Type: Conference Paper

References (12)

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