Ab-initio simulation of van der Waals MoTe2-SnS2 heterotunneling FETs for low-power electronics

IEEE Electron Device Letters

Volumn 36, Issue 5, 2015, Pages 514-516

  Szabo, Aron ^a   Koester, Steven J ^b   Luisier, Mathieu ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

Device simulation; tunnel FET

Indexed keywords

ELECTRON TUNNELING; HETEROJUNCTIONS; IV-VI SEMICONDUCTORS; LOW POWER ELECTRONICS; QUANTUM CHEMISTRY; SEMICONDUCTING TIN COMPOUNDS; TELLURIUM COMPOUNDS; TUNNEL FIELD EFFECT TRANSISTORS; VAN DER WAALS FORCES;

AB INITIO SIMULATIONS; BAND TO BAND TUNNELING; DEVICE SIMULATIONS; FIRST PRINCIPLES; ON STATE CURRENT; QUANTUM TRANSPORT SIMULATIONS; SUPPLY VOLTAGES; TUNNEL FET;

TIN COMPOUNDS;

EID: 84928711904     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/LED.2015.2409212     Document Type: Article

References (19)

1. B. Radisavljevic et al., "Single-layer MoS2 transistors, " Nature Nanotechnol., vol. 6, pp. 147-150, Dec. 2011.
2. A. K. Geim and I. V. Grigorieva, "Van der Waals heterostructures, " Nature, vol. 499, pp. 419-425, Jul. 2013.
3. C.-H. Lee et al., "Atomically thin p-n junctions with van der Waals heterointerfaces, " Nature Nanotechnol., vol. 9, pp. 676-681, Aug. 2014.
4. X. Hong et al., "Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures, " Nature Nanotechnol., vol. 9, pp. 682-686, Aug. 2014.
5. T. Roy et al., "Field-effect transistors built from all two-dimensional material components, " ACS Nano, vol. 8, no. 6, pp. 6259-6264, Apr. 2014.
6. L. Britnell et al., "Field-effect tunneling transistor based on vertical graphene heterostructures, " Science, vol. 335, no. 6071, pp. 947-950, Feb. 2012.
7. T. Georgiou et al., "Vertical field-effect transistor based on graphene- WS2 heterostructures for flexible and transparent electronics, " Nature Nanotechnol., vol. 8, pp. 100-103, Dec. 2012.
8. A. M. Ionescu and H. Riel, "Tunnel field-effect transistors as energy-efficient electronic switches, " Nature, vol. 479, pp. 329-337, Nov. 2011.
9. G. Dewey et al., "Fabrication, characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing, " in Proc. IEEE Int. Electron Devices Meeting (IEDM), Dec. 2011, pp. 33.6.1-33.6.4.
10. R. K. Ghosh and S. Mahapatra, "Monolayer transition metal dichalcogenide channel-based tunnel transistor, " IEEE J. Electron Devices Soc., vol. 1, no. 10, pp. 175-180, Oct. 2013.
11. K.-T. Lam, X. Cao, and J. Guo, "Device performance of heterojunction tunneling field-effect transistors based on transition metal dichalcogenide monolayer, " IEEE Electron Device Lett., vol. 34, no. 10, pp. 1331-1333, Oct. 2013.
12. A. Szabo, S. J. Koester, and M. Luisier, "Metal-dichalcogenide hetero- TFETs: Are they a viable option for low power electronics?" in Proc. 72nd Annu. Device Res. Conf. (DRC), Jun. 2014, pp. 19-20.
13. K. E. Moselund et al., "InAs-Si nanowire heterojunction tunnel FETs, " IEEE Electron Device Lett., vol. 33, no. 10, pp. 1453-1455, Oct. 2012.
14. D. Mohata et al., "Barrier-engineered arsenide-antimonide heterojunction tunnel FETs with enhanced drive current, " IEEE Electron Device Lett., vol. 33, no. 11, pp. 1568-1570, Nov. 2012.
15. G. Kresse and J. Furthmüller, "Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, " Phys. Rev. B, vol. 54, no. 16, pp. 11169-11186, Oct. 1996.
16. L. Liu et al., "Performance limits of monolayer transition metal dichalcogenide transistors, " IEEE Trans. Electron Devices, vol. 58, no. 9, pp. 3042-3047, Sep. 2011.
17. S. Grimme et al., "A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu, " J. Chem. Phys., vol. 132, no. 15, p. 154104, 2010.
18. N. Marzari and D. Vanderbilt, "Maximally localized generalized Wannier functions for composite energy bands, " Phys. Rev. B, vol. 56, no. 20, pp. 12847-12865, Nov. 1997.
19. M. Luisier et al., "Atomistic simulation of nanowires in the sp3d5s∗ tight-binding formalism: From boundary conditions to strain calculations, " Phys. Rev. B, vol. 74, p. 205323, Nov. 2006.