Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 19-20

  Szabo, Aron ^a   Koester, Steven J ^b   Luisier, Mathieu ^a  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SILICON;

ACTIVE COMPONENTS; BAND TO BAND TUNNELING; ELECTROSTATIC PROPERTIES; LOW SUPPLY VOLTAGES; MANUFACTURING PROCESS; ORDERS OF MAGNITUDE; QUANTUM TRANSPORT SIMULATOR; THEORETICAL STUDY;

LOW POWER ELECTRONICS;

EID: 84906568997     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872279     Document Type: Conference Paper

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