InAs-Si nanowire heterojunction tunnel FETs

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1453-1455

  Moselund, K E ^a   Schmid, H ^a   Bessire, C ^a   Bjork, M T ^b   Ghoneim, H ^a   Riel, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b QuNano AB   (Sweden)

Author keywords

Alloying; heterostructure; InAs; nanowires (NWs); tunnel FET (TFET)

Indexed keywords

GATE STACKS; INAS; SUBTHRESHOLD SLOPE; TOP CONTACT; TUNNEL FET;

ALLOYING; HETEROJUNCTIONS; NANOWIRES; SILICON;

INDIUM ARSENIDE;

EID: 84866946051     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2206789     Document Type: Article

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