Device performance of heterojunction tunneling field-effect transistors based on transition metal dichalcogenide monolayer

IEEE Electron Device Letters

Volumn 34, Issue 10, 2013, Pages 1331-1333

  Lam, Kai Tak ^a   Cao, Xi ^a   Guo, Jing ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Field effect transistors (FETs); heterojunctions; nanoelectronics; tunneling

Indexed keywords

BALLISTIC DEVICES; DEVICE PERFORMANCE; DRIVE CURRENT ENHANCEMENT; FIELD EFFECT TRANSISTOR (FETS); NON-EQUILIBRIUM GREEN'S FUNCTION; TRANSITION METAL DICHALCOGENIDES; TUNNELING FIELD-EFFECT TRANSISTORS; ULTRA-THIN;

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; MONOLAYERS; NANOELECTRONICS; TRANSITION METALS;

HETEROJUNCTIONS;

EID: 84884776073     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2277918     Document Type: Article

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