Interface engineering and characterization at the atomic-scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin-film solar cells

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 6, 2015, Pages 705-716

  Cojocaru Mirédin, Oana ^a   Fu, Yanpeng ^b   Kostka, Aleksander ^a   Sáez Araoz, Rodrigo ^b   Beyer, Andreas ^c   Knaub, Nikolai ^c   Volz, Kerstin ^c   Fischer, Christian Herbert ^b   Raabe, Dierk ^a  

^a MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

^b HAHN MEITNER INSTITUT   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

atom probe tomography; ILGAR; In2S3 alternative buffer layer; ordered defect compound; transmission electron microscopy; X ray photoelectron spectroscopy; ZnS nanodots

Indexed keywords

ATOMS; BUFFER LAYERS; CELL ENGINEERING; COPPER COMPOUNDS; EFFICIENCY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; INDIUM SULFIDE; NANODOTS; PHASE INTERFACES; PHOTOELECTRONS; PHOTONS; PROBES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THIN FILM SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; TRANSMISSIONS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC SULFIDE;

ALTERNATIVE BUFFER LAYERS; ATOM PROBE TOMOGRAPHY; CHALCOPYRITE THIN FILMS; FERMI LEVEL PINNING; ILGAR; INTERFACE ENGINEERING; ORDERED DEFECT COMPOUNDS; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

SULFUR COMPOUNDS;

EID: 84928634715     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2484     Document Type: Article

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