Spray-ILGAR ZnS nanodots/In2S3 as defect passivation/point contact bilayer buffer for Cu(In,Ga)(S,Se)2 solar cells

Solar Energy Materials and Solar Cells

Volumn 117, Issue , 2013, Pages 293-299

  Fu, Yanpeng ^a   Sáez Araoz, Rodrigo ^a   Köhler, Tristan ^a   Krüger, Martin ^a   Steigert, Alexander ^a   Lauermann, Iver ^a   Lux Steiner, Martha Ch ^a   Fischer, Christian Herbert ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

Buffer layer; Chalcopyrite solar cells; Defect passivation; ILGAR; In2S3; ZnS nanodots

Indexed keywords

CHALCOPYRITE SOLAR CELLS; DEFECT PASSIVATION; HETEROGENEOUS INTERFACES; ILGAR; INTERFACE RECOMBINATION; ION LAYER GAS REACTION; NANODOTS; SOLAR CELL EFFICIENCIES;

BUFFER LAYERS; CADMIUM SULFIDE; CARRIER TRANSPORT; DEFECTS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); SOLAR CELLS; ZINC SULFIDE;

NANOSTRUCTURED MATERIALS;

EID: 84880296872     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.06.007     Document Type: Article

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