Phase segregation, Cu migration and junction formation in Cu(In, Ga)Se2

EPJ Applied Physics

Volumn 6, Issue 2, 1999, Pages 131-139

  Herberholz, R ^a   Rau, U ^a   Schock, H W ^a   Haalboom, T ^b   Godecke T ^b   Ernst, F ^b   Beilharz, C ^c   Benz, K W ^c   Cahen, D ^d  

^a UNIVERSITY OF STUTTGART   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c UNIVERSITY OF FREIBURG   (Germany)

^d WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; ELECTROMIGRATION; INTERFACES (MATERIALS); PHASE DIAGRAMS; PHASE SEPARATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE STRUCTURE;

CHALCOPYRITE;

SEMICONDUCTING FILMS;

EID: 0032624939     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1999162     Document Type: Article

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