ZnS nanodot film as defect passivation layer for Cu(In,Ga)(S,Se) 2 thin-film solar cells deposited by Spray-ILGAR (ion-layer gas reaction)

Advanced Energy Materials

Volumn 1, Issue 4, 2011, Pages 561-564

  Fu, Yanpeng ^a   Allsop, Nicholas A ^a,b   Gledhill, Sophie E ^a   Köhler, Tristan ^a   Krüger, Martin ^a   Sáez Araoz, Rodrigo ^a   Blöck, Ulrike ^a   Lux Steiner, Martha Ch ^a   Fischer, Christian Herbert ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b Sulfurcell Solartechnik GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; CU(IN ,GA)(S ,SE)2; DEFECT PASSIVATION; DOT DENSITY; GAS REACTION; LOW TEMPERATURES; NANODOTS; ORGANIC SURFACTANTS; THIN-FILM SOLAR CELLS;

NANOSTRUCTURED MATERIALS; SURFACE ACTIVE AGENTS; ZINC SULFIDE;

COPPER;

EID: 84863714819     PISSN: 16146832     EISSN: 16146840     Source Type: Journal    
DOI: 10.1002/aenm.201100146     Document Type: Article

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