Effects of solution-grown CdS on Cu (InGa) Se2 grain boundaries

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Lei, C ^a   Duch, M ^a   Robertson, I M ^a   Rockett, A ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; BI-LAYER FILMS; CDS; CHEMICAL-BATH DEPOSITION; CU(IN , GA)SE; LOW TEMPERATURES; N-TYPE DOPING; SINGLE LAYER;

CADMIUM COMPOUNDS; CHEMICAL ANALYSIS; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; SOLAR ENERGY; TRANSMISSION ELECTRON MICROSCOPY;

CADMIUM SULFIDE;

EID: 78751534426     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3512966     Document Type: Article

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