Band-gap engineering of the h-BN/MoS2/h-BN sandwich heterostructure under an external electric field

Journal of Physics D: Applied Physics

Volumn 48, Issue 20, 2015, Pages

  Huang, Zongyu ^a   Qi, Xiang ^a   Yang, Hong ^a   He, Chaoyu ^a   Wei, Xiaolin ^a   Peng, Xiangyang ^a   Zhong, Jianxin ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

first principles calculations; graphene; molybdenum disulfide

Indexed keywords

BORON NITRIDE; CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; GRAPHENE; HETEROJUNCTIONS; VAN DER WAALS FORCES;

BAND GAP ENGINEERING; ELECTRIC FIELD INTENSITIES; EXTERNAL ELECTRIC FIELD; FIRST-PRINCIPLES CALCULATION; INDIRECT BAND GAP; MOLYBDENUM DISULFIDE; OPTOELECTRONIC APPLICATIONS; STRUCTURAL , ELECTRONIC PROPERTIES;

ENERGY GAP;

EID: 84928533967     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/48/20/205302     Document Type: Article

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