Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Journal of Physics Condensed Matter

Volumn 27, Issue 18, 2015, Pages

  Kruskopf, Mattias ^a   Pierz, Klaus ^a   Wundrack, Stefan ^a   Stosch, Rainer ^a   Dziomba, Thorsten ^a   Kalmbach, Cay Christian ^a   Müller, André ^a   Baringhaus, Jens ^b   Tegenkamp, Christoph ^b   Ahlers, Franz J ^a   Schumacher, Hans W ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

epitaxial grapheme; graphene bilayer; graphene buffer layer; quantum Hall resistance; resistance anisotropy; step bunching

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; ELECTRON TRANSPORT PROPERTIES; MORPHOLOGY; NANOPROBES; SILICON CARBIDE; SUBSTRATES; SURFACE MORPHOLOGY; TEMPERATURE; TRANSPORT PROPERTIES;

EPITAXIAL GRAPHEME; GRAPHENE BILAYERS; QUANTUM HALL RESISTANCE; RESISTANCE ANISOTROPY; STEP BUNCHING;

GRAPHENE;

EID: 84927920948     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/27/18/185303     Document Type: Article

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