Step control of vicinal 6H-SiC(0001) surface by H 2 etching

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Nakajima, A ^a   Yokoya, H ^a   Furukawa, Y ^a   Yonezu, H ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHED SURFACES; STEP CONTROL; STEP STRUCTURES; SURFACE-FREE ENERGIES;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ETCHING; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGEN; INTERFACIAL ENERGY; ORGANIC SOLVENTS; RAPID THERMAL ANNEALING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE CHEMISTRY;

EID: 20944449416     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1901838     Document Type: Article

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