Quantum hall resistance standards with good quantization at high electron mobilities

IEEE Transactions on Instrumentation and Measurement

Volumn 60, Issue 7, 2011, Pages 2455-2461

  Pierz, Klaus ^a   Götz, Martin ^a   Pesel, Eckart ^a   Ahlers, Franz Josef ^a   Schumacher, Hans Werner ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

2 D electron systems; Electrical quantum standards; integer quantum Hall effect (QHE); molecular beam epitaxy (MBE) growth; quantum Hall resistance (QHR) standard

Indexed keywords

ALGAAS/GAAS; ELECTRICAL QUANTUM STANDARDS; ELECTRON SYSTEMS; HALL RESISTANCE; HIGH ELECTRON MOBILITY; HIGH MOBILITY; INTEGER QUANTUM HALL EFFECT (QHE); MAGNETO TRANSPORT PROPERTIES; METROLOGICAL APPLICATIONS; MOBILITY VALUE; QUANTUM HALL DEVICES; QUANTUM HALL RESISTANCE; SPACER LAYER;

CRYSTALS; ELECTRON MOBILITY; ELECTRONS; EPITAXIAL GROWTH; HALL EFFECT; HALL EFFECT DEVICES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; STANDARDS;

HALL MOBILITY;

EID: 79958289393     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2010.2100651     Document Type: Article

References (11)

1. K. von Klitzing, G. Dorda, and M. Pepper, "New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance", Phys. Rev. Lett., vol. 45, no. 6, pp. 494-497, Aug. 1980.
2. T. J. Quinn, "News from the BIPM", Metrologia, vol. 26, no. 1, pp. 69-74, 1989.
3. F. Delahaye and B. Jeckelmann, "Revised technical guidelines for reliable dc measurements of the quantized Hall resistance", Metrologia, vol. 40, no. 5, pp. 217-223, Oct. 2003.
4. K. von Klitzing, G. Dorda, and M. Pepper, "New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance", Phys. Rev. Lett., vol. 45, no. 6, pp. 494-497, Aug. 1980.
5. T. J. Quinn, "News from the BIPM", Metrologia, vol. 26, no. 1, pp. 69-74, 1989.
6. F. Delahaye and B. Jeckelmann, "Revised technical guidelines for reliable dc measurements of the quantized Hall resistance", Metrologia, vol. 40, no. 5, pp. 217-223, Oct. 2003.
7. B. Jeckelmann, B. Jeanneret, and D. Inglis, "High-precision measurements of the quantized Hall resistance: Experimental conditions for universality", Phys. Rev. B, Condens. Matter, vol. 55, no. 19, pp. 13 124-13 134, May 1997.
8. W. van der Wel, E. G. Haanappel, J. E. Mooij, C. J. P. M. Harmans, G. Weimann, K. Ploog, C. T. Foxon, and J. J. Harris, "Selection criteria for AlGaAs-GaAs heterostructures in view of their use as a quantum Hall resistance standard", J. Appl. Phys., vol. 65, no. 9, pp. 3487-3497, May 1989.
9. K. Pierz, M. Götz, E. Pesel, F.-J. Ahlers, and H. W. Schumacher, "Quantum Hall resistance standards from a high-mobility molecular beam epitaxy system", in Proc. Conf. Precis. Electromagn. Meas. Dig., 2010, pp. 621-622.
10. K. Pierz and B. Schumacher, "Fabrication of QHE devices for low magnetic fields", IEEE Trans. Instrum. Meas., vol. 48, no. 2, pp. 293-295, Apr. 1999.
11. E. Pesel, B. Schumacher, and P. Warnecke, "Resistance scaling up to 1 MO at PTB with a cryogenic current comparator", IEEE Trans. Instrum. Meas., vol. 44, no. 2, pp. 273-275, Apr. 1995.