Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 106, Issue 14, 2015, Pages

  Shen, Xiao ^a   Dhar, Sarit ^b   Pantelides, Sokrates T ^a,c,d  

^a VANDERBILT UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRON TRAPS; ELECTRONS; ENERGY GAP; MOSFET DEVICES; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDE; VACANCIES;

ATOMIC SCALE PROCESS; DEVICE DEGRADATION; FIRST-PRINCIPLES CALCULATION; LOWER TEMPERATURES; SI DANGLING BONDS; STRUCTURAL RECONFIGURATIONS; THERMALLY ACTIVATED; WIDE-BAND-GAP SEMICONDUCTOR;

MOS DEVICES;

EID: 84927652340     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4917528     Document Type: Article

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