High-power true green laser diodes on semipolar {202¯1} GaN substrates

Electronics and Communications in Japan

Volumn 98, Issue 5, 2015, Pages 9-14

  Katayama, Koji ^a   Saga, Nobuhiro ^a   Ueno, Masaki ^a   Ikegami, Takatoshi ^a   Nakamura, Takao ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

GaN; green laser; semi polar; semiconductor laser

Indexed keywords

III-V SEMICONDUCTORS; INDIUM ALLOYS; LIGHT SOURCES; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

GAN SUBSTRATE; GREEN LASER; OPTICAL OUTPUT POWER; OUTPUT POWER; SEMI-POLAR; SPECTRAL REGION; WALLPLUG EFFICIENCY; WAVELENGTH RANGES;

GALLIUM NITRIDE;

EID: 84926619788     PISSN: 19429533     EISSN: 19429541     Source Type: Journal    
DOI: 10.1002/ecj.11668     Document Type: Article

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