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Volumn 117, Issue 11, 2015, Pages

Electrical and photovoltaic characteristics of MoS2/Si p-n junctions

(9) Hao, Lanzhong a Liu, Yunjie a Gao, Wei a Han, Zhide a Xue, Qingzhong a Zeng, Huizhong b Wu, Zhipeng b Zhu, Jun b Zhang, Wanli b

a CHINA UNIVERSITY OF PETROLEUM (China)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ENERGY GAP; MOLYBDENUM COMPOUNDS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR JUNCTIONS; SILICON; THIN FILMS;

CAPACITANCE-VOLTAGE CURVE; DC MAGNETRON SPUTTERING TECHNIQUE; LIGHT ILLUMINATION; MOLYBDENUM DISULFIDE; PHOTOVOLTAIC CHARACTERISTICS; PHOTOVOLTAIC DEVICES; RECOMBINATION CURRENTS; TRANSMISSION SPECTRUMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84925690845 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4915951 Document Type: Article

Times cited : (149)

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