Improvement of the SiOx passivation layer for high-efficiency Si/PEDOT: PSS heterojunction solar cells

ACS Applied Materials and Interfaces

Volumn 6, Issue 18, 2014, Pages 16027-16034

  Sheng, Jiang ^a   Fan, Ke ^b   Wang, Dan ^a   Han, Can ^a   Fang, Junfeng ^a   Gao, Pingqi ^a   Ye, Jichun ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b LANZHOU JIAOTONG UNIVERSITY   (China)

Author keywords

Heterojunction solar cells; Interface modification; Si PEDOT:PSS; SiOx passivation; Wet oxidation

Indexed keywords

CONDUCTING POLYMERS; EFFICIENCY; HETEROJUNCTIONS; ORGANIC SOLAR CELLS; OXIDATION; PASSIVATION; SILICON; SILICON COMPOUNDS; SOLAR POWER GENERATION; SURFACE ROUGHNESS; WETTING;

HETEROJUNCTION SOLAR CELLS; INTERFACE MODIFICATION; INTERFACE RECOMBINATION VELOCITY; LOW-COST PHOTOVOLTAICS; ORGANIC HETEROJUNCTIONS; POWER CONVERSION EFFICIENCIES; SI/PEDOT:PSS; WET OXIDATION;

SILICON SOLAR CELLS;

EID: 84912046898     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am503949g     Document Type: Article

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