Reconfigurable p-n junction diodes and the photovoltaic effect in exfoliated MoS2 films

Applied Physics Letters

Volumn 104, Issue 12, 2014, Pages

  Sutar, Surajit ^a   Agnihotri, Pratik ^a   Comfort, Everett ^a   Taniguchi, T ^b   Watanabe, K ^b   Ung Lee, Ji ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; MOLYBDENUM COMPOUNDS; MONOLAYERS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR JUNCTIONS;

AMBIPOLAR CONDUCTION; BAND GAP TRANSITION; DIODE IDEALITY FACTORS; ELECTROSTATIC DOPING; EXCITONIC TRANSITION; OPTOELECTRONIC PROPERTIES; OPTOELECTRONIC TECHNOLOGY; PN JUNCTION DIODES;

SEMICONDUCTOR DOPING;

EID: 84897416833     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4870067     Document Type: Article

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