Resistive switching performance improvement of Ta2O 5-x/TaOy bilayer ReRAM devices by inserting AlO δ barrier layer

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 39-41

  Wu, Huaqiang ^a,b   Li, Xinyi ^a   Wu, Minghao ^a   Huang, Feiyang ^a   Yu, Zhiping ^a   Qian, He ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY   (China)

Author keywords

AlO ; multilevel; ReRAM; tantalum oxide; triple layer

Indexed keywords

COMPLIANCE CURRENT; EXTERNAL CURRENTS; LOW OPERATION CURRENTS; MULTILEVEL; PERFORMANCE DEGRADATION; RERAM; RESISTIVE SWITCHING; TRIPLE-LAYER;

TANTALUM OXIDES;

SWITCHING SYSTEMS;

EID: 84891532322     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2288311     Document Type: Article

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