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Applied Physics Letters

Volumn 106, Issue 10, 2015, Pages

On the impact of indium distribution on the electronic properties in InGaN nanodisks

(8) Benaissa, M a Sigle, W b Ng, T K c El Bouayadi, R d Van Aken, P A b Jahangir, S e Bhattacharya, P e Ooi, B S c

a FACULTÉ DES SCIENCES (Morocco)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (Saudi Arabia)

d FACULTÉ DES SCIENCES (Morocco)

e UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ENERGY DISSIPATION; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; NANOWIRES; OPTICAL PROPERTIES; PLASMONS;

AVERAGE COMPOSITION; BAND-TO-BAND TRANSITION; DIELECTRIC FUNCTIONS; ELECTROOPTICAL PROPERTIES; EMISSION LINEWIDTH; INDIUM CONCENTRATION; INHOMOGENEOUS BROADENING; SPATIALLY RESOLVED;

ELECTRONIC PROPERTIES;

EID: 84924777961 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4915117 Document Type: Article

Times cited : (3)

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