Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires

Nanotechnology

Volumn 23, Issue 48, 2012, Pages

  Kong, X ^a   Albert, S ^b   Bengoechea Encabo, A ^b   Sanchez Garcia, M A ^b   Calleja, E ^b   Trampert, A ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL ANALYSIS; GAN TEMPLATE; HIGH SPATIAL RESOLUTION; INDIUM CONCENTRATION; INDIUM CONTENT; LINEAR RELATION; NANOWIRE GROWTH; NANOWIRE HETEROSTRUCTURES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; PLASMON EXCITATIONS; PLASMON PEAKS; PULLING EFFECT; SELF-ASSEMBLED; SI(111) SUBSTRATE; STRAIGHT-FORWARD METHOD; STRUCTURAL INFORMATION; SUBSTRATE TEMPERATURE;

ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM; NANOWIRES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 84869056261     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/48/485701     Document Type: Article

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