Plasmon energy from strained GaN quantum wells

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Benaissa, M ^a   Sigle, W ^b   Korytov, M ^c   Brault, J ^d   Vennegues P ^d   Van Aken, P A ^b  

^a NATIONAL CENTER FOR SCIENTIFIC AND TECHNICAL RESEARCH   (Morocco)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; GAN-QUANTUM WELLS; HIGH RESOLUTION; PLANAR INTERFACE; RELATIVISTIC EFFECTS; TRANSMISSION ELECTRON MICROSCOPE; VALENCE ELECTRON; VALENCE ELECTRON ENERGY-LOSS SPECTROSCOPIES;

ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; PLASMONS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84880450363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813082     Document Type: Article

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