Quantitative determination of compositional profiles using HAADF image simulations

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 11, Issue 2, 2014, Pages 284-288

  El Bouayadi, R ^a   Korytov, M ^b   van Aken, P A ^c   Vennegues P ^d   Benaissa, M ^e  

^a FACULTÉ DES SCIENCES   (Morocco)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^d CRHEA CNRS   (France)

^e NATIONAL CENTER FOR SCIENTIFIC AND TECHNICAL RESEARCH   (Morocco)

Author keywords

AlGaN barrier; Chemical quantification; GaN quantum dot; HAADF simulation

Indexed keywords

EID: 84894411556     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201300305     Document Type: Article

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