Researching the aluminum nitride etching process for application in MEMS resonators

Micromachines

Volumn 6, Issue 2, 2015, Pages 281-290

  Yang, Jian ^a,b   Si, Chaowei ^a   Han, Guowei ^a   Zhang, Meng ^a   Ma, Liuhong ^a   Zhao, Yongmei ^a,b   Ning, Jin ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Aluminum nitride; Inductively coupled plasma etching; Micro electro mechanical system

Indexed keywords

ALUMINUM; ALUMINUM NITRIDE; CHLORINE; FLOW OF GASES; INDUCTIVELY COUPLED PLASMA; MEMS; MICROELECTROMECHANICAL DEVICES; NITRIDES; RESONATORS;

CHAMBER PRESSURE; ETCHING PARAMETERS; ETCHING PROCESS; GAS CHEMISTRY; MEMS RESONATORS; MICRO ELECTRO MECHANICAL SYSTEM; MICRO-TRENCH; SIDEWALL ANGLES;

SURFACE ROUGHNESS;

EID: 84923656998     PISSN: None     EISSN: 2072666X     Source Type: Journal    
DOI: 10.3390/mi6020281     Document Type: Article

References (13)

1. Sanchez-Rojas, J.-L.; Hernando, J.; Ababneh, A.; Schmid, U.; Olivares, J.; Clement, M.; Iborra, E. Advanced determination of piezoelectric properties of AlN thin films on silicon substrates. In Proceedings of IEEE Ultrasonics Symposium, Beijing, China, 2-5 November 2008; pp. 903-906.
2. Wang, S.; Xu, Y.; Zheng, S.; Han, D. Development of 1.8 GHz film bulk acoustic resonator based on AlN. J. Artic. Semiconduct. Technol. 2012, 37, 146-149.
3. Rinaldi, M.; Zuniga, C.; Piazza, G. 5-10 GHz AlN contour-mode nanoelectromechanical resonators, In Proceedings of IEEE 22nd International Conference on Micro Electro Mechanical Systems, Sorrento, Italy, 25-29 January 2009; pp. 916-919.
4. Lin, C.M.; Chen, Y.Y.; Felmetsger, V.V.; Senesky, D.G.; Pisano, A.P. AlN/3C-SiC composite plate enabling high-frequency and high-Q micromechanical resonators. Adv. Mater. 2012, 24, 2722-2727.
5. Lin, C.M.; Yantchev, V.; Zou, J.; Chen, Y.Y.; Pisano, A.P. Micromachined one-port aluminum nitride lamb wave resonators utilizing the lowest-order symmetric mode. J. Microelectromech. Syst. 2014, 23, 78-91.
6. Lin, C.M.; Yen, T.T.; Lai, Y.J.; Felmetsger, V.V.; Hopcroft, M.A.; Kuypers, J.H.; Pisano, A.P. Temperature-compensated aluminum nitride lamb wave resonators. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 2010, 57, 524-532.
7. Bliznetsov, V.; Bin Johari, B.H.; Chentir, M.T.; Li, W.H.; Wong, L.Y.; Merugu, S.; Zhang, X.L.; Singh, N. Improving aluminum nitride plasma etch process for MEMS applications. J. Micromech. Microeng. 2013, 23, 117001.
8. Hahn, Y.; Hays, D.; Donovan, S.; Abernathy, C.; Han, J.; Shul, R.; Cho, H.; Jung, K.; Pearton, S. Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN. J. Vac. Sci. Technol. A 1999, 17, 768-773.
9. 3/Cl2/Ar inductively coupled plasma. Mater. Sci. Eng. B 2002, 95, 51-54.
10. Shah, A.P.; Laskar, M.R.; Rahman, A.A.; Gokhale, M.R.; Bhattacharya, A. Inductively coupled plasma reactive ion etching of III-nitride semiconductors. Solid State Phys. 2013, 1512, 494-495.
11. 3 pretreatment in Cl2/Ar plasma chemistry. J. Vac. Sci. Technol. A 2013, 31, 061305.
12. 3 based plasmas. J. Vac. Sci. Technol. A 1998, 16, 1621-1626.
13. Xiong, J.; Gu, H.-S.; Hu, K.; Hu, M.-Z. Influence of substrate metals on the crystal growth of AlN films. Int. J. Miner. Metall. Mater. 2010, 17, 98-103.