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Volumn 23, Issue 11, 2013, Pages

Improving aluminum nitride plasma etch process for MEMS applications

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE (ALN); CONTOUR-MODE RESONATORS; ETCHED SURFACE ROUGHNESS; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; MEMS APPLICATIONS; METAL ELECTRODES; PLASMA ETCH PROCESS; RF MICROELECTROMECHANICAL SYSTEMS;

EID: 84887112769     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/23/11/117001     Document Type: Article
Times cited : (16)

References (7)
  • 1
    • 67650330585 scopus 로고    scopus 로고
    • Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends
    • 10.1116/1.3077276 0734-2101 A
    • Piazza G 2009 Integrated aluminum nitride piezoelectric microelectromechanical system for radio front ends J. Vac. Sci. Technol. A 27 776-84
    • (2009) J. Vac. Sci. Technol. , vol.27 , pp. 776-784
    • Piazza, G.1
  • 2
    • 73849093210 scopus 로고    scopus 로고
    • Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering
    • 10.1116/1.3268620 0734-2101 A
    • Tanner S M and Felmetsger V V 2010 Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering J. Vac. Sci. Technol. A 28 69-76
    • (2010) J. Vac. Sci. Technol. , vol.28 , pp. 69-76
    • Tanner, S.M.1    Felmetsger, V.V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.