Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Applied Physics Letters

Volumn 106, Issue 7, 2015, Pages

  Jahangir, Shafat ^a   Frost, Thomas ^a   Hazari, Arnab ^a   Yan, Lifan ^a   Stark, Ethan ^a   LaMountain, Trevor ^a,c   Millunchick, Joanna M ^a   Ooi, Boon S ^b   Bhattacharya, Pallab ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c BARD COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; SILICON;

ALPHA PARAMETERS; DIFFERENTIAL GAIN; DIRECT MODULATION; EDGE EMITTING LASERS; EMISSION WAVELENGTH; MODULATION BANDWIDTH; NANOWIRE ARRAYS; SMALL SIGNAL MODULATION;

MODULATION;

EID: 84923267000     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4913317     Document Type: Article

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