Al-doping effect on structural, transport and optical properties of ZnO films by simultaneous RF and DC magnetron sputtering

Solid State Communications

Volumn 149, Issue 47-48, 2009, Pages 2177-2180

  Lu, J J ^a   Tsai, S Y ^b   Lu, Y M ^c   Lin, T C ^a   Gan, K J ^a  

^a KUN SHAN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

A. Al doped ZnO films; D. Semiconductor metal transition

Indexed keywords

A. AL-DOPED ZNO FILMS; AL-DOPED ZNO; AL-DOPING; C-AXIS ORIENTATIONS; CONDUCTING BEHAVIOR; CRYSTALLINITIES; D. SEMICONDUCTOR-METAL TRANSITION; DC MAGNETRON SPUTTERING; ELECTRICAL RESISTANCES; ELECTRICAL TRANSPORT PROPERTIES; FREE CARRIERS; HALL MEASUREMENTS; INDUCED STRESS; OPTICAL TRANSMISSION SPECTROSCOPY; POLYCRYSTALLINE; TEMPERATURE DEPENDENCE; ZNO FILMS;

ABSORPTION SPECTROSCOPY; ALUMINUM; CONDUCTIVE FILMS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; LIGHT TRANSMISSION; MAGNETRONS; METALLIC FILMS; OPTICAL PROPERTIES; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; TRANSPORT PROPERTIES; ZINC OXIDE;

OPTICAL FILMS;

EID: 70350097214     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.09.021     Document Type: Article

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