Photoelectrochemical passivated ZnO-based nanorod structured glucose biosensors using gate-recessed AlGaN/GaN ion-sensitive field-effect-transistors

Sensors and Actuators, B: Chemical

Volumn 210, Issue , 2015, Pages 756-761

  Lee, Ching Ting ^a   Chiu, Ying Shuo ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN heterostructured glucose biosensors; Gate recessed ion selective field effect transistors (ISFETs); Photoelectrochemical (PEC) method; ZnO based nanorod array

Indexed keywords

BIOSENSORS; DANGLING BONDS; ELECTROCHEMISTRY; ETCHING; GALLIUM NITRIDE; GLUCOSE; GLUCOSE SENSORS; HETEROJUNCTIONS; ION SENSITIVE FIELD EFFECT TRANSISTORS; IONS; NANORODS; PASSIVATION; PH SENSORS; PHOTOELECTROCHEMICAL CELLS; ZINC OXIDE;

ALGAN/GAN HETEROSTRUCTURES; GLUCOSE BIOSENSOR; ION-SELECTIVE FIELD EFFECT TRANSISTORS; MICHAELIS-MENTEN CONSTANT; NANO-ROD ARRAYS; PHOTOELECTROCHEMICAL ETCHING; PHOTOELECTROCHEMICAL METHOD (PEC); PHOTOELECTROCHEMICALS;

FIELD EFFECT TRANSISTORS;

EID: 84921957447     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2015.01.042     Document Type: Article

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