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Applied Physics Letters

Volumn 97, Issue 11, 2010, Pages

Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN- heterostructured nanorod light-emitting diodes

(3) Lee, Hsin Ying a Lee, Ching Ting a Yan, Jheng Tai a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EMISSION; CONDUCTIVE ATOMIC FORCE MICROSCOPY; ELECTRICAL PERFORMANCE; EMISSION MECHANISM; NATIVE DEFECT; NONRADIATIVE RECOMBINATION CENTERS; PHOTOELECTROCHEMICAL SYSTEM; SURFACE LEAKAGE CURRENTS; ZNO;

ATOMIC FORCE MICROSCOPY; DANGLING BONDS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE (FLUID); LIGHT EMISSION; LIGHT EMITTING DIODES; PASSIVATION; SURFACE DEFECTS; ZINC; ZINC OXIDE;

NANORODS;

EID: 77956850851 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3490652 Document Type: Article

Times cited : (29)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.