MoS2 quantum dot: Effects of passivation, additional layer, and h -bn substrate on its stability and electronic properties

Journal of Physical Chemistry C

Volumn 119, Issue 3, 2015, Pages 1565-1574

  Loh, G C ^a,b   Pandey, Ravindra ^a   Yap, Yoke Khin ^a   Karna, Shashi P ^c  

^a MICHIGAN TECHNOLOGICAL UNIVERSITY   (United States)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BORON NITRIDE; CHEMICAL ANALYSIS; DANGLING BONDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MONOLAYERS; NANOCRYSTALS; PASSIVATION; SUBSTRATES; TRANSITION METALS;

CHEMICAL TOPOLOGY; CO-ORDINATIVELY UNSATURATED; ELECTRONIC MATERIALS; ELECTRONICS APPLICATIONS; INSULATING SUBSTRATES; IV CHARACTERISTICS; NANOSCALE LEVELS; TRANSITION METAL DICHALCOGENIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84921450278     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp510598x     Document Type: Article

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