Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Wang, H ^a   Yu, L ^a   Lee, Y H ^a   Fang, W ^a   Hsu, A ^a   Herring, P ^a   Chin, M ^b   Dubey, M ^b   Li, L J ^c   Kong, J ^a   Palacios, T ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CVD GROWTHS; DIGITAL ELECTRONICS; FUNDAMENTAL BUILDING BLOCKS; INTEGRATED DEVICE; LOGIC APPLICATIONS; NAND GATE; SINGLE LAYER; UBIQUITOUS APPLICATION;

CHEMICAL VAPOR DEPOSITION; ELECTRON DEVICES;

MOLYBDENUM COMPOUNDS;

EID: 84876159781     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478980     Document Type: Conference Paper

References (11)

1. Splendiani, A. et al. Emerging Photoluminescence in Monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
2. Wang H., et. al. Integrated Circuits Based on Bilayer MoS2 Transistors, Nano Lett., 2012, 12 (9), pp 4674-4680.
3. Wang, J. & Lundstrom, M. Does source-to-drain tunneling limit the ultimate scaling of MOSFETs? IEEE Tech. Dig. IEDM , 707-710 (2002).
4. Street, R. A. Thin?Film Transistors. Advanced Materials 21 (2009).
5. Forrest, S. R. The path to ubiquitous and low-cost organic electronic appliances on plastic. Nature 428, 911-918 (2004).
6. Wang, H., Nezich, D., Kong, J. & Palacios, T. Graphene Frequency Multipliers. IEEE Electron Device Letters 30, 547-549 (2009).
7. Wang, H., Hsu, A., Wu, J., Kong, J. & Palacios, T. Graphene-Based Ambipolar RF Mixers. IEEE Electron Device Letters 31, 906-908 (2010).
8. Lin, Y.-M. et al. Wafer-Scale Graphene Integrated Circuit. Science 332, 1294-1297 (2011).
9. Lee, Y.-H., et. al. Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition. Advanced Materials 24, 17, 2320-2325 (2012).
10. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotechnology 6, 147-150 (2011).
11. Tsividis, Y. & McAndrew, C. Operation and modeling of the MOS transistor. (Oxford University Press, USA: 2010).