Facile growth of monolayer MoS2 film areas on SiO2

European Physical Journal B

Volumn 86, Issue 5, 2013, Pages

  Mann, John ^a   Sun, Dezheng ^a,b   Ma, Quan ^a   Chen, Jen Ru ^a   Preciado, Edwin ^a   Ohta, Taisuke ^c   Diaconescu, Bogdan ^c   Yamaguchi, Koichi ^a   Tran, Tai ^a   Wurch, Michelle ^a   Magnone, Katiemarie ^a   Heinz, Tony F ^b   Kellogg, Gary L ^c   Kawakami, Roland ^a   Bartels, Ludwig ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

N-DOPED; SINGLE LAYER; TRANSPORT MEASUREMENTS; TUBE FURNACES;

LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; PHOTOELECTRONS; RAMAN SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

MOLYBDENUM COMPOUNDS;

EID: 84877977692     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2013-31011-y     Document Type: Article

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