Band structure engineering of monolayer MoS2 on h-BN: First-principles calculations

Journal of Physics D: Applied Physics

Volumn 47, Issue 7, 2014, Pages

  Huang, Zongyu ^a,b   He, Chaoyu ^a   Qi, Xiang ^a   Yang, Hong ^a   Liu, Wenliang ^a   Wei, Xiaolin ^a   Peng, Xiangyang ^a   Zhong, Jianxin ^a  

^a XIANGTAN UNIVERSITY   (China)

^b HUNAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

first principles calculation; graphene; Molybdenum disulfide

Indexed keywords

ATOMIC LAYER; BAND STRUCTURE ENGINEERING; CHARGE EXCHANGES; FIRST-PRINCIPLES CALCULATION; MOLYBDENUM DISULFIDE; STRAIN DISTRIBUTIONS; STRUCTURAL AND ELECTRONIC PROPERTIES; SURFACE BANDS;

BORON NITRIDE; CALCULATIONS; CHARGE TRANSFER; ELECTRONIC PROPERTIES; ENERGY GAP; GRAPHENE; HETEROJUNCTIONS; MONOLAYERS; STRAIN;

MOLYBDENUM COMPOUNDS;

EID: 84893634834     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/7/075301     Document Type: Article

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