Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors

ACS Nano

Volumn 8, Issue 9, 2014, Pages 9597-9605

  Qian, Qingkai ^a,b   Li, Guanhong ^a,b   Jin, Yuanhao ^a,b   Liu, Junku ^a,b   Zou, Yuan ^a,b   Jiang, Kaili ^a,b   Fan, Shoushan ^a,b   Li, Qunqing ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b Collaborative Innovation Center of Quantum Matter ^*  (China)

Author keywords

carbon nanotube; electrostatic; oxygen; redox; trap state

Indexed keywords

ADSORBATES; CARBON; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CHARGE INJECTION; ELECTRONS; ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GAS ADSORPTION; OXYGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SINGLE ELECTRON TRANSISTORS; THIN FILM TRANSISTORS; THIN FILMS; YARN;

CONDUCTION BAND EDGE; ELECTROSTATIC DOPING; MODULATION EFFICIENCY; REDOX; SINGLE CARBON NANOTUBE; TRANSFER CHARACTERISTICS; TRAP STATE; WORK-FUNCTION DIFFERENCE;

CARBON NANOTUBES;

EID: 84921264971     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503903y     Document Type: Article

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