Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control

Nano Letters

Volumn 13, Issue 10, 2013, Pages 4810-4814

  Geier, Michael L ^a   Prabhumirashi, Pradyumna L ^a   McMorrow, Julian J ^a   Xu, Weichao ^c   Seo, Jung Woo T ^a   Everaerts, Ken ^b   Kim, Chris H ^c   Marks, Tobin J ^a,b   Hersam, Mark C ^a,b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c University of Minnesota   (United States)

Author keywords

CMOS; inverter; NAND; NOR; SWCNT; transistor

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER UTILIZATION; LOGIC GATES; METALS; MOS DEVICES; NAND CIRCUITS; NANOTUBES; OXIDE SEMICONDUCTORS; SINGLE-WALLED CARBON NANOTUBES (SWCN); THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; INVERTER; NAND; RAIL-TO-RAIL OPERATION; SINGLEWALLED CARBON NANOTUBE (SWCNT); STATIC POWER CONSUMPTION; SWCNT; THIN-FILM TRANSISTOR (TFTS);

COMPUTER CIRCUITS;

CARBON; CARBON NANOTUBE; METAL; OXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE; NANOTECHNOLOGY; SEMICONDUCTOR;

CARBON; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; METALS; NANOTECHNOLOGY; NANOTUBES, CARBON; OXIDES; SEMICONDUCTORS; TRANSISTORS, ELECTRONIC;

EID: 84885459247     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl402478p     Document Type: Article

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