Growth of competing crystal phases of α-sexithiophene studied by real-time in situ X-ray scattering

Journal of Physical Chemistry C

Volumn 119, Issue 1, 2015, Pages 819-825

  Lorch, C ^a   Banerjee, R ^a   Frank, C ^a   Dieterle, J ^a   Hinderhofer, A ^a   Gerlach, A ^a   Schreiber, F ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION RATES; FILM PREPARATION; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; TEMPERATURE; X RAY DIFFRACTION; X RAY SCATTERING;

DIFFERENT SUBSTRATES; GROWTH CONDITIONS; HIGH DEPOSITION RATES; LOW SUBSTRATE TEMPERATURE; LOW TEMPERATURES; REAL TIME MEASUREMENTS; SILICON OXIDE SUBSTRATES; SITU X-RAY SCATTERINGS;

FILM GROWTH;

EID: 84920668924     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp510321k     Document Type: Article

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