Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

Applied Physics Express

Volumn 8, Issue 1, 2015, Pages

  Murakami, Hisashi ^a   Nomura, Kazushiro ^a   Goto, Ken ^b   Sasaki, Kohei ^b,c   Kawara, Katsuaki ^a   Tu Thieu, Quang ^a   Togashi, Rie ^a   Kumagai, Yoshinao ^a   Higashiwaki, Masataka ^c   Kuramata, Akito ^b   Yamakoshi, Shigenobu ^b   Monemar, Bo ^a,d   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TAMURA CORPORATION   (Japan)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; FILM GROWTH; SECONDARY ION MASS SPECTROMETRY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

DONOR CONCENTRATIONS; EDGE DEFINED FILM FED GROWTH; ELECTRICAL CHARACTERISTIC; FULL WIDTHS AT HALF MAXIMUMS; HALIDE VAPOR PHASE EPITAXY; HIGH-CRYSTALLINE QUALITY; HOMOEPITAXIAL GROWTH; STRUCTURAL QUALITIES;

GALLIUM COMPOUNDS;

EID: 84920517179     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.8.015503     Document Type: Article

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