Ultrahigh-speed growth of GaN by hydride vapor phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2110-2112

  Yoshida, Takehiro ^a   Oshima, Yuichi ^a   Watanabe, Kazutoshi ^a   Tsuchiya, Tadayoshi ^a   Mishima, Tomoyoshi ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

Crystal morphology; Defects; Hydride vapor phase epitaxy; Semiconducting III V materials

Indexed keywords

CATHODOLUMINESCENCE IMAGING; CRYSTAL MORPHOLOGIES; DISLOCATION DENSITIES; FEED-RATES; FREESTANDING GAN SUBSTRATES; GAN CRYSTALS; GAN LAYERS; GROWTH OF GAN; HOMOEPITAXIAL LAYERS; HYDRIDE VAPOR PHASE EPITAXY; SEMI CONDUCTING III-V MATERIALS; SOURCE MATERIAL; ULTRA HIGH SPEED; X RAY ROCKING CURVE;

DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GROWTH RATE; HYDRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; VAPORS;

VAPOR PHASE EPITAXY;

EID: 79960726103     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000953     Document Type: Article

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