Analytical macrospin modeling of the stochastic switching time of spin-transfer torque devices

IEEE Transactions on Electron Devices

Volumn 62, Issue 1, 2015, Pages 164-170

  Vincent, Adrien F ^a   Locatelli, Nicolas ^a   Klein, Jacques Olivier ^a   Zhao, Weisheng S ^a,b   Galdin Retailleau, Sylvie ^a   Querlioz, Damien ^a  

^a CNRS   (France)

^b BEIHANG UNIVERSITY   (China)

Author keywords

Magnetic devices; magnetic memories; modeling; simulation

Indexed keywords

CMOS INTEGRATED CIRCUITS; MAGNETIC DEVICES; MAGNETIC STORAGE; MODELS; PROBABILITY DISTRIBUTIONS; STOCHASTIC MODELS; STOCHASTIC SYSTEMS; SWITCHING; TUNNEL JUNCTIONS;

IN-PLANE MAGNETIZATION; INTERMEDIATE REGIMES; MAGNETIC MEMORY; MAGNETIC TUNNEL JUNCTION; MAGNETORESISTIVE MEMORY; SIMULATION; SPIN TRANSFER TORQUE; STOCHASTIC SWITCHING;

ANALYTICAL MODELS;

EID: 84920131751     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2372475     Document Type: Article

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